Silicon Epitaxy
Modeling and Control
SC Solutions provides controls and physical modeling solutions to its customers for silicon epitaxy. SC Solutions’
engineers have designed temperature controllers for a RTCVD equipment
manufacturer for their next-generation, single-wafer epitaxy chamber. The dynamic finite-volume heat transfer model, and the model-based,
multiple-input, multiple-output, feedback controllers were computer tested for performance (temperature ramp-up and ramp-down rates, wafer
temperature uniformity, etc). Multiple design iterations were explored
quickly, and suitable modifications were made to the chamber design before constructing a prototype. This integrated approach, with an eye towards design-for-controllability, resulted in considerable time and money savings for our customer. Apart from real-time feedback controllers, we also provide run-to-run controllers for increased repeatability of wafer properties.
In addition, SC Solutions develops reactor-scale CVD
models for the industry using CFDRC’s popular simulation software,
CFD-ACE. These models provide insight into a variety of issues such as
performance limits, troubleshooting, design improvements, etc. The graphic above describes a physical model of a horizontal, hot-wall reactor for silicon
epitaxy. This relatively simple 2D case study was taken from the literature
solely to show SC Solutions’ modeling capabilities.
