Virtual Integrated Prototyping for Epitaxial Growth

Phase III: Control of Interface Morphology in III-V Nanoelectronic Devices

One of the primary goals of this DARPA sponsored project was to produce a controller that will demonstrate real-time control of morphology of MBE-grown semiconductor interfaces.The scope of this project included modeling and simulation of epitaxial growth, device performance and sensors, development of reduced order models and control, validation through extensive experimentation and microscopy, implementation and demonstration of controls.The project is led by Hughes Research Laboratory (HRL) with UCLA, SC Solutions, and University of Colorado as subcontractors.