Reactor-scale Modeling of Silicon Epitaxy

This case study of epitaxial deposition of silicon film on a silicon substrate in a horizontal hot-wall reactor reproduces an earlier modeling study by Habuka et al. [1]. The steady-state finite element (FEM) model incorporates fluid flow, heat transfer, dilute...

Multi-Scale Model of the RF Diode Sputter Deposition of GMR Thin Films

A reactor-scale model incorporating the principal physical processes involved in RF diode sputtering has been developed and then integrated into a detailed steady-state input-output model of the growth of copper films. The model links critical aspects of the process...

Control of Sputter Process for Improved Run-to-Run Repeatability

Radio frequency (RF) diode sputtering deposition is a widely used process for depositing GMR thin films for multilayers, spin valves, spin-dependent tunneling (SDT) devices, etc. However, the thin films thus produced often show significant variation in GMR properties...