In this white paper, we describe the numerical simulation of CVD process for epitaxial growth of silicon using trichlorosilane (SiHCl3). This study uses the one-step, finite-rate chemistry for the 2-D reactor geometry from the literature, and successfully reproduces the published results. A commercial software package, CFD-ACEe, popular in the semiconductor industry, was used for our modeling work. Several tests were carried out on the model to establish convergence on the basis of mesh refinement and number of iterations needed.  We concluded that our results agree very well with those published in the literature. This validation study served as a starting point for other commercial projects for modeling CVD and MOCVD processes.